IRFG210

Technical Characteristics

• Inclosure Material

  ceramic

• Overall Length

  0.753 inches maximum

• Terminal Length

  0.230 inches maximum

• Overall Width

  0.300 inches maximum

• Internal Configuration

  field effect all transistor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  mo-36 ac

• Component Name And Quantity

  4 transistor

• Mounting Method

  terminal

• Semiconductor Material

  silicon all transistor

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air

• Terminal Type And Quantity

  14 pin

• Overall Height

  0.020 inches maximum

• Channel Polarity And Control Type

  n-channel junction type all transistor

• Features Provided

  hermetically sealed case

• Voltage Rating In Volts Per Characteristic

  200.0 maximum drain to gate voltage all transistor and 200.0 maximum drain to source voltage and 20.0 maximum gate to source voltage

• Current Rating Per Characteristic

  2.50 amperes maximum off-state current, peak all transistor

• Power Rating Per Characteristic

  1.0 watts maximum total power dissipation all transistor