NE73435D
Semiconductor Devices and Associated Hardware
TRANSISTOR
NE73435D
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
press fit
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Voltage Rating In Volts Per Characteristic
3.0 maximum emitter to base voltage, static, collector open and 14.0 maximum collector to emitter voltage/static/base open and 30.0 maximum collector to base voltage/static/emitter open
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Overall Height
1.8 millimeters maximum
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Current Rating Per Characteristic
50.00 milliamperes zero-gate-voltage source current blank
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Overall Length
10.55 millimeters nominal
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector preset
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Transfer Ratio
25.0 minimum static forward current transfer ratio, common-emitter and 200.0 maximum static forward current transfer ratio, common-emitter
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Function For Which Designed
general purpose
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Terminal Type And Quantity
4 ribbon
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Inclosure Material
metal and ceramic
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction