RFK25P08
Semiconductor Devices and Associated Hardware
TRANSISTOR
RFK25P08
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
field effect
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Mounting Method
unthreaded hole
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 pin and 1 case
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Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
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Semiconductor Material
silicon
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Overall Height
11.4 millimeters maximum
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-204
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Current Rating Per Characteristic
25.00 amperes source cutoff current maximum of standard range
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Overall Width
26.66 millimeters maximum
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Overall Length
38.3 millimeters nominal
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air