2N2060
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
2N2060
5961 - Semiconductor Devices and Associated Hardware
Joint Army-Navy Specifications
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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~1
type data on certain environmental and performa
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Test Data Document
81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general
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Voltage Rating In Volts Per Characteristic
100.0 maximum collector to base voltage/static/emitter open all transistor and 7.0 maximum emitter to base voltage, static, collector open all transistor and 60.0 maximum collector to emitter voltage/static/base open all transistor
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Specification/Standard Data
81349-mil-prf-19500/270 government specification
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Inclosure Material
metal
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Terminal Type And Quantity
6 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
2.12 watts small-signal input power, common-collector preset all transistor
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Special Features
all transistor junction pattern arrangement: npn
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Overall Length
0.150 inches minimum and 0.260 inches maximum
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Current Rating Per Characteristic
500.00 milliamperes zero-gate-voltage source current blank all transistor
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Semiconductor Material
silicon all transistor
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Terminal Length
1.500 inches minimum and 1.750 inches maximum
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Component Name And Quantity
2 semiconductor device diode
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Terminal Circle Diameter
0.200 inches nominal
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Mounting Method
terminal