4JD12X018

Technical Characteristics

• ~1

  type data on certain environmental and performa

• Test Data Document

  81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general

• Voltage Rating In Volts Per Characteristic

  100.0 maximum collector to base voltage/static/emitter open all transistor and 7.0 maximum emitter to base voltage, static, collector open all transistor and 60.0 maximum collector to emitter voltage/static/base open all transistor

• Specification/Standard Data

  81349-mil-prf-19500/270 government specification

• Inclosure Material

  metal

• Terminal Type And Quantity

  6 uninsulated wire lead

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  2.12 watts small-signal input power, common-collector preset all transistor

• Special Features

  all transistor junction pattern arrangement: npn

• Overall Length

  0.150 inches minimum and 0.260 inches maximum

• Current Rating Per Characteristic

  500.00 milliamperes zero-gate-voltage source current blank all transistor

• Semiconductor Material

  silicon all transistor

• Terminal Length

  1.500 inches minimum and 1.750 inches maximum

• Component Name And Quantity

  2 semiconductor device diode

• Overall Diameter

  0.335 inches minimum and 0.370 inches maximum

• Terminal Circle Diameter

  0.200 inches nominal

• Mounting Method

  terminal