82008B3KA

Technical Characteristics

• Special Features

  electrostatic discharge sensitive

• Word Quantity (Non-Core)

  8192

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Bit Quantity (Non-Core)

  32000

• Output Logic Form

  transistor-transistor logic

• Case Outline Source And Designator

  f-6 mil-m-38510

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Configuration

  flat pack

• Criticality Code Justification

  feat

• Hybrid Technology Type

  monolithic

• Features Provided

  electrostatic sensitive and bipolar and monolithic and programmable and high reliability

• Memory Device Type

  prom

• Terminal Type And Quantity

  24 pin