411885

Technical Characteristics

• Features Provided

  erasable and monolithic and w/enable

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Time Rating Per Chacteristic

  200.00 nanoseconds maximum access

• Terminal Surface Treatment

  solder

• Terminal Type And Quantity

  28 printed circuit

• Case Outline Source And Designator

  d-10 mil-m-38510

• Input Circuit Pattern

  16 input

• Bit Quantity (Non-Core)

  65536

• Current Rating Per Characteristic

  10.00 milliamperes reverse current, dc absolute

• Body Length

  1.490 inches maximum

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Body Height

  0.172 inches minimum and 0.217 inches maximum

• Voltage Rating And Type Per Characteristic

  -2.0 volts minimum power source and 7.0 volts maximum power source

• Maximum Power Dissipation Rating

  170.0 milliwatts

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Capitance Rating Per Characteristic

  10.00 input picofarads maximum and 12.00 output picofarads maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  8192