IRF 640

Technical Characteristics

• Semiconductor Material

  silicon

• Mounting Method

  terminal and unthreaded hole

• Inclosure Material

  plastic

• Overall Height

  0.190 inches maximum

• Internal Configuration

  field effect

• Terminal Type And Quantity

  3 pin

• Power Rating Per Characteristic

  125.0 watts small-signal input power, common-collector absolute

• Overall Length

  0.650 inches maximum

• Terminal Length

  0.580 inches maximum

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Facility Quantity

  1

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-220ab

• Maximum Operating Temp Per Measurement Point

  100.0 deg celsius junction

• Current Rating Per Characteristic

  72.00 amperes forward current, average any acceptable

• Overall Width

  0.420 inches maximum

• Voltage Rating In Volts Per Characteristic

  200.0 maximum drain to source voltage

• Channel Polarity And Control Type (Non-Core)

  n-channel junction type