GIBB112

Technical Characteristics

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector absolute

• Thread Series Designator

  unf

• Special Features

  junction pattern arrangement: npn

• Terminal Type And Quantity

  3 tab, solder lug

• Voltage Rating In Volts Per Characteristic

  500.0 maximum collector to base voltage/static/emitter open and 400.0 maximum collector to emitter voltage/static/base open and 8.0 maximum emitter to base voltage, static, collector open

• Features Provided

  hermetically sealed case

• Function For Which Designed

  amplifier

• Current Rating Per Characteristic

  20.00 amperes zero-gate-voltage source current blank and 2.50 amperes zero-gate-voltage source current maximum of standard range

• Overall Length

  1.062 inches minimum and 1.330 inches maximum

• Semiconductor Material

  silicon

• Internal Configuration

  junction contact-darlington connected

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Inclosure Material

  glass and metal

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-61

• Nominal Thread Size

  0.250 inches

• Overall Width Across Flats

  0.667 inches minimum and 0.687 inches maximum