IRFH350-2
Semiconductor Devices and Associated Hardware
TRANSISTOR
IRFH350-2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unf
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
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Features Provided
hermetically sealed case and electrostatic sensitive
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Terminal Type And Quantity
3 tab, solder lug
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
200.0 maximum drain to source voltage and 200.0 maximum drain to gate voltage
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Current Rating Per Characteristic
30.00 amperes source cutoff current maximum of standard range
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Overall Length
1.330 inches maximum
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Internal Configuration
field effect
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Inclosure Material
metal
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Overall Width Across Flats
0.687 inches maximum
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Nominal Thread Size
0.250 inches
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-210ac