IDT7M856S100CB

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Features Provided

  burn in and electrostatic sensitive and w/enable and hermetically sealed and bidirectional

• Terminal Type And Quantity

  28 printed circuit

• Maximum Power Dissipation Rating

  4.0 watts

• Input Circuit Pattern

  26 input

• Storage Temp Range

  -65.0/+155.0 deg celsius

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Memory Device Type

  ram

• End Item Identification

  5865-01-262-1191 data analysis c

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Memory Capacity

  unknown

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Word Quantity (Non-Core)

  32768

• Body Width

  0.584 inches minimum and 0.604 inches maximum

• Body Height

  0.280 inches maximum

• Bit Quantity (Non-Core)

  262144

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Time Rating Per Chacteristic

  err-060 nominal hand pull and err-060 nominal hand

• Body Length

  1.380 inches minimum and 1.420 inches maximum