RFP10N12
Semiconductor Devices and Associated Hardware
TRANSISTOR
RFP10N12
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
60.0 watts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Mounting Method
terminal and unthreaded hole
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Inclosure Material
plastic
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum of standard range and 25.00 amperes forward current, average any acceptable
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Voltage Rating In Volts Per Characteristic
120.0 maximum drain to source voltage and 120.0 maximum drain to gate voltage and 20.0 maximum gate to source voltage
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Overall Height
0.190 inches maximum
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Overall Length
0.625 inches maximum
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Internal Configuration
field effect
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Terminal Type And Quantity
3 pin
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Terminal Length
0.562 inches maximum
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Mounting Facility Quantity
1
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-220ab
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Overall Width
0.420 inches maximum
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Channel Polarity And Control Type (Non-Core)
n-channel junction type