587R904H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
587R904H01
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Overall Height
0.330 inches maximum
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Test Data Document
97942-587r904 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
120.0 maximum collector to emitter voltage/static/base open and 120.0 maximum collector to base voltage/static/emitter open and 5.0 maximum emitter to base voltage, static, collector open
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Length
1.550 inches maximum
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Internal Configuration
junction contact-darlington connected
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Power Rating Per Characteristic
300.0 watts small-signal input power, common-collector absolute
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Current Rating Per Characteristic
100.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum
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Transfer Ratio
400.0 minimum static forward current transfer ratio, common-emitter
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Overall Width
1.550 inches maximum
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Criticality Code Justification
feat
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Special Features
weapon system essential; junction pattern arrangement; pnp