MTP5N35
Semiconductor Devices and Associated Hardware
TRANSISTOR
MTP5N35
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
plastic
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-220ab
-
Electrode Internally-Electrically Connected To Case
collector
-
Mounting Method
terminal and unthreaded hole
-
Voltage Rating In Volts Per Characteristic
350.0 maximum drain to source voltage and 350.0 maximum drain to gate voltage and 20.0 maximum emitter to base voltage, static, collector open
-
Current Rating Per Characteristic
5.00 amperes maximum drain current and 12.00 amperes maximum off-state current, peak
-
Power Rating Per Characteristic
75.0 watts maximum total device dissipation
-
Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
-
Overall Length
0.620 inches maximum
-
Terminal Length
0.562 inches maximum
-
Overall Height
0.190 inches maximum
-
Overall Width
0.425 inches maximum
-
Mounting Facility Quantity
1
-
Internal Configuration
field effect
-
Channel Polarity And Control Type
n-channel junction type
-
Semiconductor Material
silicon
-
Terminal Type And Quantity
3 pin and 1 case