2747G-1

Technical Characteristics

• Current Rating Per Characteristic

  10.00 milliamperes forward current, total rms nanoamperes all semiconductor device diode

• Overall Diameter

  0.225 inches maximum

• Semiconductor Material

  silicon all semiconductor device diode

• Electrode Internally-Electrically Connected To Case

  collector

• Voltage Rating In Volts Per Characteristic

  8.8 maximum breakdown voltage, dc all semiconductor device diode

• Mounting Method

  terminal

• Component Name And Quantity

  2 semiconductor device diode

• Overall Length

  0.320 inches maximum

• Terminal Type And Quantity

  2 uninsulated wire lead

• Features Provided

  hermetically sealed case

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius ambient air

• Special Features

  all semiconductor device diode junction pattern arrangement: pn

• Terminal Length

  1.255 inches maximum

• Power Rating Per Characteristic

  1500.0 watts small-signal input power, common-collector major all semiconductor device diode

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  do-13

• Inclosure Material

  glass and metal

• Capacitance Rating In Picofarads

  100.0 maximum all semiconductor device diode