615238-906

Semiconductor Devices and Associated Hardware

TRANSISTOR

615238-906

5961-01-299-9818

5961 - Semiconductor Devices and Associated Hardware

Raytheon Company

TRANSISTOR

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Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Overall Diameter

    0.230 inches maximum

  • Current Rating Per Characteristic

    50.00 amperes source cutoff current maximum of standard range

  • Internal Configuration

    field effect-dual gate

  • End Item Identification

    rt-1168b

  • Test Data Document

    37695-615238 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Power Rating Per Characteristic

    1.2 watts small-signal input power, common-collector absolute

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum drain to gate voltage and 25.0 maximum drain to source voltage

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Inclosure Material

    metal

  • Terminal Length

    0.500 inches minimum

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius ambient air

  • Overall Length

    0.210 inches maximum

  • Electrode Internally-Electrically Connected To Case

    source

Certified to
AS6081 Methods

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