442A110
Semiconductor Devices and Associated Hardware
TRANSISTOR
442A110
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Overall Length
1.573 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
burn in and hermetically sealed case
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
850.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and 450.0 maximum breakdown voltage, collector to emitter, sustained and 6.0 maximum emitter to base voltage, dc
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Current Rating Per Characteristic
15.00 amperes source cutoff current maximum and 10.00 amperes source cutoff current minimum
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Power Rating Per Characteristic
175.0 watts small-signal input power, common-collector absolute
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Height
0.350 inches nominal