5080-71

Semiconductor Devices and Associated Hardware

TRANSISTOR

5080-71

5961-01-301-2371

5961 - Semiconductor Devices and Associated Hardware

Raytheon Company

TRANSISTOR

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Technical Characteristics

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Length

    1.573 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    burn in and hermetically sealed case

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    850.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and 450.0 maximum breakdown voltage, collector to emitter, sustained and 6.0 maximum emitter to base voltage, dc

  • Current Rating Per Characteristic

    15.00 amperes source cutoff current maximum and 10.00 amperes source cutoff current minimum

  • Power Rating Per Characteristic

    175.0 watts small-signal input power, common-collector absolute

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Overall Height

    0.350 inches nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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