BSV81
Semiconductor Devices and Associated Hardware
TRANSISTOR
BSV81
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Mounting Method
terminal
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Overall Length
5.3 millimeters maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Terminal Length
12.7 millimeters minimum
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Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
30.0 maximum source to substrate voltage and 30.0 maximum drain to substrate voltage and 10.0 maximum gate to substrate voltage
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Overall Diameter
4.8 millimeters maximum
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Internal Configuration
field effect
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead
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Current Rating Per Characteristic
25.00 milliamperes source cutoff current maximum of standard range and 50.00 milliamperes zero-gate-voltage source current any acceptable