BSV81

Semiconductor Devices and Associated Hardware

TRANSISTOR

BSV81

5961-01-301-4750

5961 - Semiconductor Devices and Associated Hardware

Philips Semiconductors Inc

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Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Overall Length

    5.3 millimeters maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-72

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius junction

  • Terminal Length

    12.7 millimeters minimum

  • Power Rating Per Characteristic

    200.0 milliwatts small-signal input power, common-collector preset

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum source to substrate voltage and 30.0 maximum drain to substrate voltage and 10.0 maximum gate to substrate voltage

  • Overall Diameter

    4.8 millimeters maximum

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Current Rating Per Characteristic

    25.00 milliamperes source cutoff current maximum of standard range and 50.00 milliamperes zero-gate-voltage source current any acceptable

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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