MS10250
Semiconductor Devices and Associated Hardware
TRANSISTOR
MS10250
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
weapon system essential; junction pattern arrangement: npn
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Test Data Document
96214-807721 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
400.0 maximum collector-to-emitter, substaining voltage, base open-circuited and 450.0 maximum collector-to-emitter substaining voltage, with specified circuit between base and emitter and 500.0 maximum collector to emitter saturation voltage
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Electrode Internally-Electrically Connected To Case
collector
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Criticality Code Justification
feat
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Overall Height
0.250 inches minimum and 0.450 inches maximum
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Overall Width
1.050 inches maximum
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Current Rating Per Characteristic
20.00 amperes zero-gate-voltage source current blank and 2.50 amperes zero-gate-voltage source current maximum of standard range
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Features Provided
hermetically sealed case and burn in
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Power Rating Per Characteristic
175.0 watts small-signal input power, common-collector absolute
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Mounting Facility Quantity
2
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End Item Identification
s-3b viking, p-3 orion aircraft.
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Internal Configuration
junction contact-darlington connected
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Length
1.553 inches minimum and 1.573 inches maximum