20655

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Inclosure Material

  ceramic

• Current Rating Per Characteristic

  175.00 milliamperes maximum zero-gate-voltage drain current all transistor

• Overall Length

  0.358 inches maximum

• Semiconductor Material

  silicon all transistor

• Voltage Rating In Volts Per Characteristic

  15.0 maximum drain to source voltage all transistor

• Component Name And Quantity

  2 semiconductor device diode and 2 transistor

• Special Features

  all semiconductor device diode junction pattern arrangement: pn

• Current Rating Per Characteristic

  100.00 microamperes maximum forward current, dc all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Overall Height

  0.100 inches maximum

• Voltage Rating In Volts Per Characteristic

  0.9 maximum forward voltage, dc all semiconductor device diode

• Mounting Method

  press fit

• Overall Width

  0.358 inches maximum

• Terminal Type And Quantity

  20 uninsulated wire lead