BDV65B

Semiconductor Devices and Associated Hardware

TRANSISTOR

BDV65B

5961-01-305-7665

5961 - Semiconductor Devices and Associated Hardware

Philips Semiconductors Inc

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Technical Characteristics

  • Overall Height

    4.6 millimeters maximum

  • Internal Configuration

    junction contact-darlington connected

  • Overall Width

    15.2 millimeters maximum

  • Inclosure Material

    plastic

  • Mounting Method

    terminal and unthreaded hole

  • Semiconductor Material

    silicon

  • Terminal Length

    13.6 millimeters minimum

  • Overall Length

    21.0 millimeters maximum

  • Current Rating Per Characteristic

    10.00 amperes source cutoff current maximum

  • Special Features

    junction pattern arrangement: npn

  • Maximum Operating Temp Per Measurement Point

    165.0 deg celsius junction

  • Power Rating Per Characteristic

    125.0 watts small-signal input power, common-collector minimum

  • Transfer Ratio

    1.0 minimum static forward current transfer ratio, common-emitter

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, collector-to-base, emitter open

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Facility Quantity

    1

  • Electrode Internally-Electrically Connected To Case

    collector

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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