BDV65B
Semiconductor Devices and Associated Hardware
TRANSISTOR
BDV65B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
4.6 millimeters maximum
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Internal Configuration
junction contact-darlington connected
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Overall Width
15.2 millimeters maximum
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Inclosure Material
plastic
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Mounting Method
terminal and unthreaded hole
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Semiconductor Material
silicon
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Terminal Length
13.6 millimeters minimum
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Overall Length
21.0 millimeters maximum
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum
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Special Features
junction pattern arrangement: npn
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
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Power Rating Per Characteristic
125.0 watts small-signal input power, common-collector minimum
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Transfer Ratio
1.0 minimum static forward current transfer ratio, common-emitter
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Facility Quantity
1
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Electrode Internally-Electrically Connected To Case
collector