UFND110

Technical Characteristics

• Terminal Type And Quantity

  4 printed circuit

• Voltage Rating In Volts Per Characteristic

  100.0 nominal drain to source voltage and -20.0 minimum gate to source voltage and 20.0 maximum gate to source voltage and 100.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 100.0 nominal drain to

• Overall Width

  0.230 inches minimum and 0.280 inches maximum

• Overall Height

  0.125 inches minimum and 0.140 inches maximum

• Maximum Operating Temp Per Measurement Point

  150.0 deg fahrenheit junction

• Power Rating Per Characteristic

  1.0 watts nominal total device dissipation

• Current Rating Per Characteristic

  1.00 amperes nominal drain current and 250.00 microamperes maximum zero-gate-voltage drain current and 1.00 amperes minimum on-state drain current and 1.00 amperes maximum source current

• ~1

  gate voltage and 2.0 minimum gate to source threshold voltage and 4.0 maximum gate to source threshold voltage

• Semiconductor Material

  silicon

• Mounting Method

  terminal

• Channel Polarity And Control Type

  n-channel insulated gate type

• Internal Configuration

  field effect

• Terminal Length

  0.280 inches minimum and 0.310 inches maximum

• Overall Length

  0.198 inches maximum

• Inclosure Material

  ceramic