C90026
Semiconductor Devices and Associated Hardware
TRANSISTOR
C90026
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Power Rating Per Characteristic
1.2 watts maximum total device dissipation
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Current Rating Per Characteristic
200.00 milliamperes maximum collector current, dc
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Semiconductor Material
silicon
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Terminal Circle Diameter
0.100 inches nominal
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Mounting Method
terminal
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Internal Junction Configuration
pnp
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Electrode Internally-Electrically Connected To Case
collector
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Internal Configuration
junction contact
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End Item Identification
training set,electronic warfare an/mst-t1v
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
12.0 maximum collector to emitter voltage/static/base open and 4.5 maximum emitter to base voltage, dc and 15.0 maximum collector to base voltage/static/emitter open
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Features Provided
burn in
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Terminal Length
0.500 inches minimum