C0805C339DSGAV

Technical Characteristics

• Body Style

  chip type

• Tolerance Range Per Section

  -0.50/+0.50 picofarads single section

• Nonderated Continuous Voltage Rating And Type Per Section

  50.0 dc single section

• Case Material

  ceramic

• Body Length

  1.7 millimeters minimum and 2.3 millimeters maximum

• Power Factor At Reference Temp In Percent

  0.001

• Terminal Type And Quantity

  2 bonding pad

• Tolerance Of Temp Coefficient Per Section In Ppm Per Deg Celsius

  -30.0/+30.0 single section

• Reliability Indicator

  not established

• Insulation Resistance At Reference Temp

  10000.0 megohms

• Nonderated Operating Temp

  -55.0 deg celsius minimum and 125.0 deg celsius maximum

• Body Width

  1.0 millimeters minimum and 1.6 millimeters maximum

• Body Height

  1.5 millimeters maximum

• Overall Width

  1.0 millimeters minimum and 1.6 millimeters maximum

• Precious Material And Location

  terminal surfaces palladium and terminal surfaces silver

• Schematic Diagram Designator

  no common or grounded electrode(s)

• Overall Height (Non-Core)

  1.5 millimeters maximum

• Terminal Length

  0.3 millimeters minimum and 0.8 millimeters maximum

• Capacitance Value Per Section

  3.300 picofarads single section

• Precious Material

  palladium and silver

• Overall Length

  1.7 millimeters minimum and 2.3 millimeters maximum

• Temp Coefficient Of Capacitance Per Section In Ppm Per Deg Celsius

  0.0 single section

• Terminal Surface Treatment

  palladium and silver