G101960-823
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
G101960-823
5962 - Microcircuits, Electronic
Raytheon Technical Services Company
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Word Quantity (Non-Core)
256
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Operating Temp Range
-55.0/+125.0 deg celsius
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Input Circuit Pattern
16 input
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Features Provided
hermetically sealed and burn in and electrostatic sensitive and monolithic
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Terminal Type And Quantity
24 leadless
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Memory Device Type
ram
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Maximum Power Dissipation Rating
495.0 milliwatts
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Storage Temp Range
-65.0/+150.0 deg celsius
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Inclosure Configuration
leadless flat pack
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Voltage Rating And Type Per Characteristic
7.0 volts maximum power source
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Time Rating Per Chacteristic
75.00 nanoseconds maximum propagation delay time, low to high level output and 75.00 nanoseconds maximum propagation delay time, high to low level output
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Output Logic Form
transistor-transistor logic
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Bit Quantity (Non-Core)
1024