ROM/PROM
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
ROM/PROM
5962 - Microcircuits, Electronic
Defense Electronics Supply Center
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Voltage Rating And Type Per Characteristic
7.0 volts maximum power source
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Inclosure Configuration
dual-in-line
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Maximum Power Dissipation Rating
750.0 milliwatts
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Test Data Document
97942-581r679 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Features Provided
hermetically sealed and burn in and programmable and bipolar and high speed
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Output Logic Form
transistor-transistor logic
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Bit Quantity (Non-Core)
1024
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Word Quantity (Non-Core)
256
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Operating Temp Range
-55.0/+125.0 deg celsius
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Case Outline Source And Designator
d-2 mil-m-38510
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Time Rating Per Chacteristic
30.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output
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End Item Identification
5840-01-020-5631 radar set
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Input Circuit Pattern
10 input
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Body Height
0.140 inches minimum and 0.185 inches maximum
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Terminal Type And Quantity
16 printed circuit
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
rom
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Body Length
0.840 inches maximum
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Body Width
0.220 inches minimum and 0.310 inches maximum
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder