NE-41635

Technical Characteristics

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  18.0 minimum breakdown voltage, collector-to-emitter, base open

• Terminal Type And Quantity

  4 ribbon

• Mounting Method

  press fit

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction

• Overall Length

  1.8 millimeters nominal

• Transfer Ratio

  30.0 minimum static forward current transfer ratio, common-emitter and 200.0 maximum static forward current transfer ratio, common-emitter

• Inclosure Material

  ceramic

• Overall Height

  12.0 millimeters nominal

• Power Rating Per Characteristic

  600.0 milliwatts small-signal input power, common-collector absolute

• Current Rating Per Characteristic

  100.00 milliamperes source cutoff current maximum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Overall Width

  12.0 millimeters nominal