501A1015-11

Technical Characteristics

• Inclosure Material

  metal

• Internal Configuration

  junction contact

• Mounting Method

  press fit

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• ~1

  ector to emitter voltage, dc with base short-circuited to emitter and 4.0 maximu

• Voltage Rating In Volts Per Characteristic

  60.0 maximum collector to base voltage/static/emitter open and 60.0 maximum coll

• Current Rating Per Characteristic

  1.00 amperes maximum collector current, dc

• Power Rating Per Characteristic

  175.0 watts maximum total device dissipation

• Overall Length

  27.7 millimeters maximum

• Overall Height

  3.43 millimeters maximum

• Overall Width

  27.7 millimeters maximum

• Electrode Internally-Electrically Connected To Case

  collector

• Internal Junction Configuration

  npn

• ~2

  m emitter to base voltage, static, collector open

• ~1

  imum static forward current transfer ratio, common-emitter

• Transfer Ratio

  10.0 minimum static forward current transfer ratio, common-emitter and 100.0 max

• Terminal Type And Quantity

  4 ribbon