FS101-3000-011N
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
FS101-3000-011N
5961 - Semiconductor Devices and Associated Hardware
Bae Systems Mission Systems Gfa
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Mounting Method
terminal
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector major
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End Item Identification
1440-01-215-4868 armament subsystem, helicopter, guided missile launcher
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Current Rating Per Characteristic
5.00 microamperes forward current, average peak
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Specification/Standard Data
81349-mil-s-19500/507 government specification
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Inclosure Material
glass or plastic
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Voltage Rating In Volts Per Characteristic
25.7 minimum reverse breakdown voltage, dc and 28.4 maximum reverse breakdown voltage, dc
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Overall Length
0.570 inches maximum
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Terminal Type And Quantity
2 uninsulated wire lead
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Terminal Length
1.000 inches minimum and 1.625 inches maximum
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Semiconductor Material
silicon
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Overall Diameter
0.215 inches minimum and 0.235 inches maximum
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Features Provided
burn in and hermetically sealed case and quality assurance level tx
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
do-13
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Function For Which Designed
transient suppressor
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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~1
data on certain environmental and performanc