G339337-1

Technical Characteristics

• Inclosure Material

  ceramic

• Overall Height

  0.180 inches maximum

• Component Name And Quantity

  4 transistor

• Features Provided

  burn in and hermetically sealed case

• Semiconductor Material

  silicon all transistor

• ~1

  breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown vo

• ~2

  ltage, emitter-to-base, collector open all transistor

• Voltage Rating In Volts Per Characteristic

  60.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum

• Current Rating Per Characteristic

  600.00 milliamperes maximum collector current, dc all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  14 printed circuit

• Overall Length

  0.660 inches minimum and 0.785 inches maximum

• Terminal Length

  0.100 inches minimum

• Overall Width

  0.220 inches minimum and 0.280 inches maximum

• Internal Configuration

  junction contact all transistor

• Internal Junction Configuration

  pnp all transistor

• Mounting Method

  terminal

• Power Rating Per Characteristic

  0.65 watts maximum total power dissipation all transistor