RBVQ100N7
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
RBVQ100N7
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Overall Length
0.640 inches minimum and 0.786 inches maximum
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Overall Height
0.100 inches minimum and 0.200 inches maximum
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(Non-Core Data) Channel Polarity And Control Type
n-channel insulated gate type all transistor
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Component Name And Quantity
4 transistor
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Features Provided
electrostatic sensitive
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Semiconductor Material
silicon all transistor
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Voltage Rating In Volts Per Characteristic
60.0 maximum drain to source voltage and 60.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source all transistor
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Current Rating Per Characteristic
0.225 amperes maximum drain current all transistor
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Special Features
item must comply with requirements of defense supply center columbus production standard no. lo4262
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Terminal Type And Quantity
14 pin
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Inclosure Material
plastic
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Overall Width
0.275 inches minimum and 0.310 inches maximum
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Mounting Method
terminal
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Criticality Code Justification
zzzy
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Design Control Reference
rbvq100n7
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Manufacturers Code
59640
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Reference Number Differentiating Characteristics
reference number differentiating material will be in accordance with naval inventory control point activity hx quality control. manufacturing and testing specifications available at the dla icp.