C11597-1

Semiconductor Devices and Associated Hardware

TRANSISTOR

C11597-1

5961-01-320-9410

5961 - Semiconductor Devices and Associated Hardware

Lockheed Martin Corporation

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    -40.0 maximum drain to gate voltage and -40.0 maximum drain to source voltage

  • Inclosure Material

    metal

  • Features Provided

    burn in and hermetically sealed case

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Power Rating Per Characteristic

    6.5 watts maximum total power dissipation

  • Current Rating Per Characteristic

    -2.50 amperes maximum drain current

  • Semiconductor Material

    silicon

  • Terminal Circle Diameter

    0.200 inches nominal

  • Mounting Method

    terminal

  • Electrode Internally-Electrically Connected To Case

    drain

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-39

  • Channel Polarity And Control Type

    p-channel insulated gate type

  • Internal Configuration

    field effect

  • Overall Diameter

    0.350 inches minimum and 0.370 inches maximum

  • Terminal Length

    0.500 inches nominal

  • Overall Length

    0.240 inches minimum and 0.260 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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