VP1204N2
Semiconductor Devices and Associated Hardware
TRANSISTOR
VP1204N2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
-40.0 maximum drain to gate voltage and -40.0 maximum drain to source voltage
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Inclosure Material
metal
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Features Provided
burn in and hermetically sealed case
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Power Rating Per Characteristic
6.5 watts maximum total power dissipation
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Current Rating Per Characteristic
-2.50 amperes maximum drain current
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Semiconductor Material
silicon
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Terminal Circle Diameter
0.200 inches nominal
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Mounting Method
terminal
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Electrode Internally-Electrically Connected To Case
drain
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Channel Polarity And Control Type
p-channel insulated gate type
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Internal Configuration
field effect
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Overall Diameter
0.350 inches minimum and 0.370 inches maximum
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Terminal Length
0.500 inches nominal
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Overall Length
0.240 inches minimum and 0.260 inches maximum