128EDCC00742-1

Technical Characteristics

• Mounting Method

  unthreaded hole all transistor

• Internal Configuration

  junction contact-darlington connected all transistor

• Component Name And Quantity

  2 transistor

• Inclosure Material

  metal all transistor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  t0-66 all transistor

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum all transistor

• Voltage Rating In Volts Per Characteristic

  150.0 maximum breakdown voltage, collector-to-emitter, base open all transistor

• Features Provided

  hermetically sealed case

• Internal Junction Configuration

  npn all transistor

• Terminal Type And Quantity

  2 pin all transistor and 1 case all transistor

• Semiconductor Material

  silicon all transistor

• Transfer Ratio

  1.0 minimum static forward current transfer ratio, common-emitter all transistor and 10.0 maximum static forward current transfer ratio, common-emitter all transistor

• Overall Width

  0.700 inches maximum all transistor

• Overall Height

  0.340 inches maximum all transistor

• Component Function Relationship

  matched

• Overall Length

  1.252 inches maximum all transistor

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction all transistor

• Mounting Facility Quantity

  2 all transistor

• Power Rating Per Characteristic

  25.0 watts small-signal input power, common-collector absolute all transistor