77A107175P001

Technical Characteristics

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  burn in and electrostatic sensitive and monolithic and programmed and ultraviole

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Overall Length

  2.096 inches maximum

• Input Circuit Pattern

  18 input

• Case Outline Source And Designator

  d-5 mil-m-38510

• Terminal Surface Treatment

  solder

• ~1

  200.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  rom

• Overall Width

  0.630 inches maximum

• Body Height

  0.210 inches maximum

• Maximum Power Dissipation Rating

  1.1 watts

• Overall Height

  0.425 inches maximum

• Body Length

  2.096 inches maximum

• Body Width

  0.620 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• ~1

  t erasable

• Inclosure Material

  ceramic

• Bit Quantity

  65536

• Word Quantity

  4096

• Voltage Rating And Type Per Characteristic

  -0.6 volts minimum power source and 7.0 volts maximum power source

• Time Rating Per Chacteristic

  200.00 nanoseconds maximum propagation delay time, low to high level output and

• Test Data Document

  96906-mil-std-883 standard

• Terminal Type And Quantity

  40 printed circuit