MA42327
Semiconductor Devices and Associated Hardware
TRANSISTOR
MA42327
5961 - Semiconductor Devices and Associated Hardware
Cobham Electronic Systems Inc.
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Precious Material And Location
die metallization, emitter and base leads, other leads plated gold
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Function For Which Designed
microwave
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Semiconductor Material
silicon
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Terminal Length
0.500 inches minimum and 1.500 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Current Rating Per Characteristic
70.00 milliamperes source cutoff current maximum
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Precious Material
gold
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Power Rating Per Characteristic
450.0 milliwatts small-signal input power, common-collector preset
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Test Data Document
00724-20-01111 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Terminal Circle Diameter
0.090 inches minimum and 0.110 inches maximum
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Voltage Rating In Volts Per Characteristic
3.0 maximum emitter to base voltage, static, collector open and 20.0 maximum collector to base voltage/static/emitter open