52815900A
Semiconductor Devices and Associated Hardware
TRANSISTOR
52815900A
5961 - Semiconductor Devices and Associated Hardware
Boonton Electronics Corporation
TRANSISTOR
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Technical Characteristics
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Inclosure Material
plastic
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Overall Width
0.175 inches minimum and 0.205 inches maximum
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Internal Configuration
field effect
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Current Rating Per Characteristic
150.00 milliamperes maximum zero-gate-voltage drain current and 1.00 nanoamperes maximum reverse gate current with all other terminals short-circuit to source, junction-gate
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Height
0.125 inches minimum and 0.165 inches maximum
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(Non-Core Data) Channel Polarity And Control Type
n-channel insulated gate type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-92
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Mounting Method
terminal
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
40.0 minimum breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 10.0 maximum gate to source cutoff voltage
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Power Rating Per Characteristic
360.0 milliwatts maximum total device dissipation
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Terminal Type And Quantity
3 uninsulated wire lead