BUZ325

Semiconductor Devices and Associated Hardware

TRANSISTOR

BUZ325

5961-01-327-3609

5961 - Semiconductor Devices and Associated Hardware

Siemens Components Inc

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Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Current Rating Per Characteristic

    12.50 amperes zero-gate-voltage source current megawatts

  • Overall Height

    0.182 inches nominal

  • Semiconductor Material

    silicon

  • Inclosure Material

    plastic

  • Overall Width

    0.600 inches nominal

  • Overall Length

    1.200 inches nominal

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Internal Configuration

    field effect

  • Terminal Type And Quantity

    3 pin

  • Voltage Rating In Volts Per Characteristic

    400.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 4.0 maximum gate to source threshold voltage

  • Power Rating Per Characteristic

    125.0 watts small-signal input power, common-collector absolute

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-218aa

  • Terminal Length

    0.470 inches minimum

Certified to
AS6081 Methods

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