BUZ325

Technical Characteristics

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Mounting Method

  terminal

• Current Rating Per Characteristic

  12.50 amperes zero-gate-voltage source current megawatts

• Overall Height

  0.182 inches nominal

• Semiconductor Material

  silicon

• Inclosure Material

  plastic

• Overall Width

  0.600 inches nominal

• Overall Length

  1.200 inches nominal

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Internal Configuration

  field effect

• Terminal Type And Quantity

  3 pin

• Voltage Rating In Volts Per Characteristic

  400.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 4.0 maximum gate to source threshold voltage

• Power Rating Per Characteristic

  125.0 watts small-signal input power, common-collector absolute

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-218aa

• Terminal Length

  0.470 inches minimum