CDR31BP8R2BBWS

Technical Characteristics

• Test Data Document

  81349-mil-c-55681 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Precious Material

  palladium and silver

• Temp Coefficient Of Capacitance Per Section In Ppm Per Deg Celsius

  0.0 single section

• Terminal Surface Treatment

  palladium and silver

• Body Style

  chip type

• Body Height

  1.3 millimeters maximum

• Specification/Standard Data

  81349-mil-c-55681/7 government specification

• Overall Length (Non-Core)

  2.0 millimeters nominal

• Overall Width (Non-Core)

  1.3 millimeters nominal

• Case Material

  ceramic

• Tolerance Range Per Section

  -0.10/+0.10 picofarads single section

• Terminal Type And Quantity

  2 bonding pad

• Reliability Failure Rate Level In Percent

  0.001

• Nonderated Continuous Voltage Rating And Type Per Section

  100.0 dc single section

• Body Width

  1.3 millimeters nominal

• Reliability Indicator

  established

• Tolerance Of Temp Coefficient Per Section In Ppm Per Deg Celsius

  -30.0/+30.0 single section

• Body Length

  2.0 millimeters nominal

• Overall Height (Non-Core)

  1.3 millimeters maximum

• Nonderated Operating Temp

  -55.0 deg celsius minimum and 125.0 deg celsius maximum

• Insulation Resistance At Maximum Operating Temp

  10000.0 megohms

• Capacitance Value Per Section

  8.200 picofarads single section

• Dissipation Factor At Reference Temp In Percent

  0.150

• Precious Material And Location

  terminal surfaces palladium and terminal surfaces silver

• Insulation Resistance At Reference Temp

  100000.0 megohms

• Schematic Diagram Designator

  no common or grounded electrode(s)

• Terminal Length

  0.3 millimeters minimum and 0.7 millimeters maximum

• ~1

  data on certain environmental and performanc