NH312A1849P1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
NH312A1849P1
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Inclosure Material
glass
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Overall Length
0.160 inches minimum and 0.260 inches maximum
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Terminal Length
1.000 inches minimum
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Overall Diameter
0.080 inches minimum and 0.120 inches maximum
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Internal Junction Configuration
pn
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Field Force Effect Type
electrostatic charge
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Features Provided
electrostatic sensitive and burn in
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Special Features
nuclear hardness critical item
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Internal Configuration
junction contact
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Mounting Method
terminal
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Criticality Code Justification
feat
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
20.0 maximum repetitive peak reverse voltage, maximum peak total value and 14.0 maximum reverse voltage, total rms
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Current Rating Per Characteristic
1.00 amperes maximum average on-state current, 180 degrees conduction angle, average over a full 60-hz cycle and 100.00 amperes maximum peak forward surge current
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Terminal Type And Quantity
2 uninsulated wire lead