JBP38S165MJT

Technical Characteristics

• Features Provided

  bipolar and burn in and programmable and monolithic and schottky

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  1.02 watts

• Bit Quantity (Non-Core)

  16384

• Terminal Type And Quantity

  24 printed circuit

• Inclosure Configuration

  dual-in-line

• Input Circuit Pattern

  11 input

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -0.5 volts maximum power source and 7.0 volts maximum power source

• Inclosure Material

  ceramic

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Operating Temp Range

  -55.0/+125.0 deg celsius