STSWTC02-1

Technical Characteristics

• Semiconductor Material

  silicon

• Terminal Type And Quantity

  4 bonding pad

• Current Rating Per Characteristic

  200.00 milliamperes source cutoff current maximum

• Internal Configuration

  junction contact

• Overall Width

  0.037 inches minimum and 0.043 inches maximum

• Precious Material

  gold

• Special Features

  junction pattern arrangement: pnp

• Precious Material And Location

  eutectie die bonds surfaces terminals and land areas surfaces gold

• Voltage Rating In Volts Per Characteristic

  60.0 maximum collector to emitter voltage/static/base open and 60.0 maximum collector to base voltage/static/emitter open and 5.0 maximum emitter to base voltage, static, collector open

• Mounting Method

  terminal

• Overall Height

  0.030 inches minimum and 0.040 inches maximum

• Overall Length

  0.072 inches minimum and 0.078 inches maximum

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Transfer Ratio

  50.0 minimum static forward current transfer ratio, common-emitter

• Power Rating Per Characteristic

  0.28 watts small-signal input power, common-collector minimum