UFNH1000
Semiconductor Devices and Associated Hardware
TRANSISTOR
UFNH1000
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Facility Quantity
1
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Thread Series Designator
unf
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
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Features Provided
hermetically sealed case and electrostatic sensitive
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Terminal Type And Quantity
3 tab, solder lug
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Overall Length
0.747 inches minimum and 0.915 inches maximum
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Mounting Method
terminal and threaded stud
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 100.0 maximum breakdown voltage, dc and 20.0 maximum gate to source voltage
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Current Rating Per Characteristic
30.00 amperes source cutoff current maximum of standard range and 120.00 amperes forward current, average any acceptable
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Internal Configuration
field effect
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Terminal Length
0.315 inches minimum and 0.415 inches maximum
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Inclosure Material
metal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-61
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Nominal Thread Size
0.250 inches
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Overall Width Across Flats
0.667 inches minimum and 0.687 inches maximum