2N5013TX
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5013TX
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
0.230 inches minimum and 0.260 inches maximum
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Inclosure Material
metal
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current maximum and 50.00 milliamperes source cutoff current minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Length
1.500 inches nominal
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Overall Diameter
0.358 inches minimum and 0.370 inches maximum
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Terminal Circle Diameter
0.190 inches minimum and 0.210 inches maximum
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Voltage Rating In Volts Per Characteristic
800.0 maximum collector to base voltage/static/emitter open and 800.0 maximum collector to emitter reverse voltage and 5.0 maximum emitter to base voltage, dc
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Mounting Method
terminal
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Power Rating Per Characteristic
4.0 watts small-signal input power, common-collector absolute
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Terminal Type And Quantity
3 uninsulated wire lead
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Electrode Internally-Electrically Connected To Case
collector
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Transfer Ratio
30.0 minimum static forward current transfer ratio, common-emitter and 180.0 maximum static forward current transfer ratio, common-emitter