JANTX1N5711

Technical Characteristics

• Field Force Effect Type

  electrostatic charge

• Voltage Rating In Volts Per Characteristic

  50.0 maximum working peak reverse voltage all semiconductor device diode

• Semiconductor Material

  silicon all semiconductor device diode

• Component Function Relationship

  matched

• Inclosure Material

  glass all semiconductor device diode

• Internal Configuration

  junction contact all semiconductor device diode

• Features Provided

  burn in and electrostatic sensitive

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode

• Component Name And Quantity

  4 semiconductor device diode

• Terminal Length

  1.000 inches minimum all semiconductor device diode and 1.500 inches maximum all semiconductor device diode

• Overall Length

  0.150 inches minimum all semiconductor device diode and 0.170 inches maximum all semiconductor device diode

• Internal Junction Configuration

  pn all semiconductor device diode

• End Item Identification

  5895-01-177-0791 receiver-transmitter

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction all semiconductor device diode

• Power Rating Per Characteristic

  250.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Overall Diameter

  0.068 inches minimum all semiconductor device diode and 0.076 inches maximum all semiconductor device diode

• Test Data Document

  80063-a3006760 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)