1A24205H01
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
1A24205H01
5962 - Microcircuits, Electronic
Northrop Grumman Systems Corporation
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Terminal Surface Treatment
solder
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Inclosure Configuration
dual-in-line
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Body Width
0.310 inches maximum
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Bit Quantity (Non-Core)
256
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Output Logic Form
transistor-transistor logic
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Inclosure Material
ceramic
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Features Provided
programmed and monolithic and hermetically sealed and burn in and bipolar
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Body Length
0.840 inches maximum
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Storage Temp Range
-65.0/+150.0 deg celsius
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Terminal Type And Quantity
16 printed circuit
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Memory Device Type
prom
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Voltage Rating And Type Per Characteristic
7.0 volts maximum input
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Maximum Power Dissipation Rating
739.0 watts
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Input Circuit Pattern
6 input
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Time Rating Per Chacteristic
80.00 nanoseconds maximum propagation delay time, high to low level output and 80.00 nanoseconds maximum propagation delay time, low to high level output
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Word Quantity (Non-Core)
32
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Body Height
0.185 inches maximum
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Current Rating Per Characteristic
130.00 milliamperes reverse current, dc absolute
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Case Outline Source And Designator
d-2 mil-m-38510
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Operating Temp Range
-55.0/+125.0 deg celsius