635A862H01

Technical Characteristics

• ~1

  and 3.0 maximum emitter to base voltage, stati

• Voltage Rating In Volts Per Characteristic

  60.0 maximum collector to emitter voltage, dc with base short-circuited to emitter all transistor and 25.0 maximum collector to emitter voltage/static/base open all transistor and 80.0 maximum collector to base voltage/static/emitter open all transistor

• End Item Identification

  radar set an/sps-40d

• Precious Material

  gold

• Precious Material And Location

  terminal surfaces gold

• Electrode Internally-Electrically Connected To Case

  emitter

• Semiconductor Material

  silicon all transistor

• Features Provided

  burn in and hermetically sealed case

• Special Features

  all transistor junction pattern arrangement: npn

• Mounting Facility Quantity

  2

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Component Name And Quantity

  2 transistor

• Current Rating Per Characteristic

  22.00 amperes source cutoff current maximum all transistor

• Overall Length

  0.900 inches nominal

• Inclosure Material

  metal

• Power Rating Per Characteristic

  9.0 watts small-signal input power, common-collector preset all transistor

• Mounting Method

  slot

• Overall Height

  0.285 inches nominal

• Terminal Type And Quantity

  1 case and 4 ribbon

• Overall Width

  0.650 inches nominal